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| BUF646 * BUF646A Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor (SWOT) HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature Optimized RBSOA High reverse voltage 14283 Applications Electronic lamp ballast circuits Switch-mode power supplies Absolute Maximum Ratings Tcase = 25C, unless otherwise specified Parameter Collector-emitter voltage g Test Conditions Type BUF646 BUF646A BUF646 BUF646A Symbol VCEO VCEO VCES VCES VEBO IC ICM IB IBM Ptot Tj Tstg Value 400 450 850 1000 9 7 14 3 5 70 150 -65 to +150 Unit V V V V V A A A A W C C Emitter-base voltage Collector current Collector peak current Base current Base peak current Total power dissipation Junction temperature Storage temperature range Tcase 25C Maximum Thermal Resistance Tcase = 25C, unless otherwise specified Parameter Junction case Test Conditions Symbol RthJC Value 1.78 Unit K/W Document Number 86513 Rev. 2, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 1 (8) BUF646 * BUF646A Vishay Telefunken Electrical Characteristics Tcase = 25C, unless otherwise specified Parameter Test Conditions Collector cut-off cur- VCE = 850 V rent VCE = 1000 V VCE = 850 V; Tcase = 150C VCE = 1000 V; Tcase = 150C Collector-emitter IC = 500 mA; L = 125 mH; breakdown voltage Imeasure = 100 mA (figure 1) Emitter-base IE = 1 mA breakdown voltage Collector-emitter IC = 2.5 A; IB = 0.4 A saturation voltage IC = 4 A; IB = 0.8 A IC = 5 A; IB = 1 A Base-emitter satuIC = 2.5 A; IB = 0.4 A ration voltage IC = 4 A; IB = 0.8 A IC = 5 A; IB = 1 A DC forward current VCE = 2 V; IC = 10 mA transfer ratio VCE = 2 V; IC = 1 A VCE = 2 V; IC = 4 A Collector-emitter VS = 50 V; L = 1.0 mH; working voltage Tcase = 125C; IC = 2.5 A; IB1 = 0.25 A; RBB = 2.4 W; -VBB = 5 V VS = 50 V; L = 1.0 mH; Tcase = 125C; IC = 2.5 A; IB1 = 0.25 A; RBB = 0.6 W; -VBB = 0 V VS = 50 V; L = 1.0 mH; Tcase = 125C; IC = 4 A; IB1 = 0.8 A; RBB = 2.4 W; -VBB = 5 V VS = 50 V; L = 1.0 mH; Tcase = 125C; IC = 4 A; IB1 = 0.8 A; RBB = 0.6 W; -VBB = 0 VS = 50 V; L = 1.0 mH; Tcase = 125C; IC = 7.5 A; IB1 = 1.50 A; RBB = 2.4 W; -VBB = 5 V Dynamic saturation IC = 4 A; IB = 0.8 A; t = 3 ms y voltage IC = 4 A; IB = 0.8 A; t = 5 ms Gain bandwidth IC = 500 mA; VCE = 10 V; product f = 1 MHz Type Symbol BUF646 ICES BUF646A ICES BUF646 ICES BUF646A ICES BUF646 V(BR)CEO BUF646A V(BR)CEO V(BR)EBO VCEsat VCEsat VCEsat VBEsat VBEsat VBEsat hFE hFE hFE VCEW Min Typ Max 100 100 0.5 0.5 Unit mA mA 400 450 9 0.25 0.40 1.00 0.90 1.00 1.30 10 10 5 500 20 0.50 mA mA V V V V V V V V V 1.10 BUF646A V BUF646A VCEW 500 V BUF646A VCEW 500 V BUF646A VCEW 500 V BUF646A VCEW 400 V VCEsatdyn VCEsatdyn fT 3.7 1.7 9 V V MHz www.vishay.de * FaxBack +1-408-970-5600 2 (8) Document Number 86513 Rev. 2, 20-Jan-99 BUF646 * BUF646A Vishay Telefunken Switching Characteristics Tcase = 25C, unless otherwise specified Parameter Inductive load (figure 2) Storage time Fall time Cross over time Storage time Fall time Cross over time Storage time Fall time Cross over time Storage time Fall time Cross over time Test Conditions IC = 2.5 A; IB1 = 0.4 A; Vclamp = 300 V; L = 1 mH; -VBB = 0 RBB = 0.6 W V 0; 06 IC = 2.5 A; IB1 = 0.4 A; -IB2 = 1 25 A; Vclamp = 300 V I 1.25 A V; L = 1 mH; -VBB = 5 V; mH V V Tcase = 100C IC = 4 A; IB1 = 0.8 A; Vclamp = 300 V; L = 200 mH; -VBB = 0 RBB = 0.6 W V 0; 06 IC = 4 A; IB1 = 0.8 A; -IB2 = 2 0 A; Vclamp = 300 V L I 2.0 A V; = 200 mH; -VBB = 5 V; mH V V Tcase = 100C Type Symbol ts tf tc ts tf tc ts tf tc ts tf tc Min Typ 2.2 0.22 0.4 2.3 0.12 0.25 2 0.22 0.5 2.5 0.15 0.4 Max 3 0.4 0.8 3 0.25 0.5 3 0.4 0.8 3.5 0.4 0.8 Unit ms ms ms ms ms ms ms ms ms ms ms ms 94 8863 V S2 + 10 V IB IC w Imeasure IC 5 IC V S1 + 0 to 30 V V(BR)CEO tp T tp 3 Pulses + LC VCE V(BR)CEO 100 mW + 0.1 + 10 ms I(BR)R Figure 1. Test circuit for V(BR)CE0 Document Number 86513 Rev. 2, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 3 (8) BUF646 * BUF646A Vishay Telefunken 94 8853 IB IB1 LC 0 -IB2 IC (1) IB1 RB VBB IB VCE Vclamp (2) IC VCC 0.9 IC t + (1) Fast electronic switch (2) Fast recovery rectifier 0.1 IC t ts tr Figure 2. Test circuit for switching characteristics - inductive load www.vishay.de * FaxBack +1-408-970-5600 4 (8) Document Number 86513 Rev. 2, 20-Jan-99 BUF646 * BUF646A Vishay Telefunken Typical Characteristics (Tcase = 25_C unless otherwise specified) 100 P tot - Total Power Dissipation ( W ) 8 IC - Collector Current ( A ) 1.76 K/W 10 12.5 K/W 6 1 25 K/W 0.1 0.01 0.001 50 K/W RthJA = 85 K/W 4 0.1 x IC < IB2 < 0.5 x IC VCESat < 2V 0 0 100 200 300 400 500 600 2 0 95 10545 25 50 75 100 125 150 95 10560 VCE - Collector Emitter Voltage ( V ) Tcase ( C ) Figure 3. VCEW - Diagram 100 FBSOA IC - Collector Current ( A ) 10 Tj 100 IC - Collector Current ( A ) Figure 6. Ptot vs.Tcase v125C RBSOA 10 Tj v125C 1 BUF646 0.1 tr 0.01 1 10 BUF646A 1 0.1 BUF646 0.01 BUF646A t0.2ms 100 1000 10000 1 95 9898 10 100 1000 10000 95 9897 VCE - Collector Emitter Voltage ( V ) VCE - Collector Emitter Voltage ( V ) Figure 4. IC vs. VCE 100 - Forward DC Current Transfer Ratio - Forward DC Current Transfer Ratio 100 Figure 7. IC vs. VCE Tcase = 125C VCE = 5V Tcase = 25C 10 10 2V Tcase = 25C 0.1 1 10 FE h 1 0.01 h FE 1 0.01 0.1 1 10 94 9202 IC - Collector Current (A) 94 9203 IC - Collector Current (A) Figure 5. hFE vs. IC Figure 8. hFE vs. IC Document Number 86513 Rev. 2, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 5 (8) BUF646 * BUF646A Vishay Telefunken - Collector Emitter Saturation Voltage (V) VCEsatdyn - Dynamic Collector Emitter Saturation Voltage ( V ) 10 16 1 IC = 1A 2.5A 4A 7A 12 8 Tcase = 125C 4 25C 0 0 4 8 12 16 20 0.1 Tcase = 25C 0.01 0.01 0.1 CEsat 1 10 95 9892 V 94 9205 IB - Base Current (A) t - Time ( ms ) Figure 9. VCEsat vs. IB 10 t s ,t f - Switching Times ( m s ) ts 1 tf 0.1 saturated switching R-load IC = 2.5A, IB1 = 0.25A 0.01 0 95 9894 Figure 11. VCEsatdyn vs. t 1 2 3 -IB2/IB1 4 5 Figure 10. ts, tf vs. -IB2/IB1 www.vishay.de * FaxBack +1-408-970-5600 6 (8) Document Number 86513 Rev. 2, 20-Jan-99 BUF646 * BUF646A Vishay Telefunken Dimensions in mm 0.52 0.40 4.8 4.4 2.70 2.35 1.40 1.27 1.3 1.0 0.85 0.65 1.5 0.9 E 10.4 9.8 3.8 3.5 C 2.64 2.44 B 1.5 1.2 2.9 2.7 6.7 5.8 4.8 4.3 13.6 12.2 16.0 15.2 Standard Plastic Case 14A 3 DIN 41 869 JEDEC TO 220 94 9184 technical drawings according to DIN specifications Collector connected with metallic surface Document Number 86513 Rev. 2, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 7 (8) BUF646 * BUF646A Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de * FaxBack +1-408-970-5600 8 (8) Document Number 86513 Rev. 2, 20-Jan-99 |
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